features z low frequency power amplifier application z power switching application maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -35 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -5 v i c collector current ?continuous -0.8 a p c* collector dissipation 200 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =- 1ma,i e =0 -35 v collector-emitter breakdown voltage v (br)ceo i c = -10ma, i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e =-1ma, i c =0 -5 v collector cut-off current i cbo v cb =-30 v,i e =0 -0.1 a emitter cut-off current i ebo v eb = -5v,i c =0 -0.1 a h fe(1) v ce =-1v, i c =-100ma 100 320 dc current gain h fe(2) v ce =-1v, i c =-800ma 40 collector-emitter saturation voltage v ce (sat) i c =-500ma, i b = -20ma -0.4 v base- emitter voltage v be v ce =-1v, i c =-10ma -0.5 -0.8 v transition frequency f t v ce =-5v, i c =-10ma, 120 mhz collector output capacitance c ob v cb =-10v, i e =0,f=1mhz 13 pf classification of h fe(1) rank o y range 100-200 160-320 marking io iy so t -23 1. base 2. emitter 3. collector KTA1298 transistor (pnp) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics KTA1298 2 date:2011/05 www.htsemi.com semiconductor jinyu
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